(China (Mainland))
Product Summary
The MRF237 is a silicon NPN RF power transistor. It is designed for large signal power amplifier applications operating to 225 MHz.
Parametrics
MRF237 absolute maximum ratings: (1)IC: 1.0 A; (2)VCBO: 36 V; (3)VCEO: 18 V; (4)PDISS: 8.0 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +200 ℃; (7)θJC: 22 ℃/W.
Features
MRF237 characteristics: (1)BVCEO: 18 V; (2)BVCES: 36 V; (3)BVEBO: 4.0 V; (4)ICBO: 0.25 mA; (5)hFE: 5.0; (6)COB: 15 to 20 pF; (7)GPE: 12 to 14dB; (8)η: 50% to 62%.
Diagrams
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 MRF237 |
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Data Sheet |
Negotiable |
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MRF20030 |
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MRF20030R |
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MRF20060 |
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MRF20060_1248487 |
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Negotiable |
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MRF20060R |
Other |
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Negotiable |
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MRF20060RS |
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Negotiable |
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